View tk10a60d5 datasheet:

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A60D5 ITK10A60D5 FEATURES Low drain-source on-resistance RDS(on) = 0.8 (typ.) Enhancement mode Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 10 A D I Drain Current-Single Pulsed 40 A DM P Total Dissipation @T =25 45 W D C T Max. Operating Junction Temperature 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 2.78 Channel-to-ambient thermal resistance /W Rth(ch-a) 62.5 1 ... See More ⇒

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