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BUZ 110S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tube BUZ110S E3045A P-TO263-3-2 Q67040-S4005-A6 Tape and Reel BUZ110S E3045 P-TO263-3-2 Q67040-S4005-A5 Tube Maximum Ratings, at Tj = 25 C unless otherwise specified Parameter Symbol Value Unit Continuous drain current A ID TC = 25 C, limited by bond wire 80 TC = 100 C 66 Pulsed drain current 320 IDpulse TC = 25 C Avalanche energy, single pulse 460 mJ EAS ID =80A, VDD =25V, RGS =25 20 Avalanche energy, periodic limited by Tjmax EAR 6 kV/ s Reverse diode dv/dt dv/dt IS ... See More ⇒

 

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