All Transistors. Datasheet

 

View sgp02n120 sgd02n120 sgi02n120g datasheet:

sgp02n120_sgd02n120_sgi02n120gsgp02n120_sgd02n120_sgi02n120g

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-3-11 PG-TO-262-3-1 PG-TO-220-3-1 Qualified according to JEDEC1 for target applications (D-PAK) (I -PAK) Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models http //www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package SGP02N120 1200V 2A 0.11mJ GP02N120 PG-TO-220-3-1 150 C SGD02N120 1200V 2A 0.11mJ 02N120 PG-TO-252-3-11 150 C SGI02N120 1200V 2A 0.11mJ GI02N120 PG-TO-262-3-1 150 C Maximum Ratings Parameter Symbol Value Unit... See More ⇒

 

Keywords - ALL TRANSISTORS DATASHEET

 sgp02n120 sgd02n120 sgi02n120g.pdf Design, MOSFET, Power

 sgp02n120 sgd02n120 sgi02n120g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sgp02n120 sgd02n120 sgi02n120g.pdf Database, Innovation, IC, Electricity

 

 
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