All Transistors. Datasheet

 

View sgp02n60 sgd02n60 datasheet:

sgp02n60_sgd02n60sgp02n60_sgd02n60

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252-3-1 (D-PAK) PG-TO-220-3-1 - parallel switching capability (TO-252AA) (TO-220AB) Pb-free lead plating; RoHS compliant Qualified according to JEDEC2 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat)150C Tj Marking PackageSGP02N60 600V 2A 2.2V G10N60 PG-TO-220-3-1150C SGD02N60 600V 2A 2.2V G10N60 PG-TO-252-3-11150C Maximum Ratings Parameter Symbol Value UnitCollector-emitter voltag

 

Keywords - ALL TRANSISTORS DATASHEET

 sgp02n60 sgd02n60.pdf Design, MOSFET, Power

 sgp02n60 sgd02n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sgp02n60 sgd02n60.pdf Database, Innovation, IC, Electricity

 

 
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