View auirfp064n datasheet:

PD - 96375 AUTOMOTIVE GRADE AUIRFP064N HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.008 Fast Switching G Fully Avalanche Rated ID 110A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications, this S Cellular design of HEXFET Power MOSFETs utilizes D G the latest processing techniques to achieve low on- resistance per silicon area. This benefit combined with TO-247AC the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and GDS reliable device for use in Automotive and a wide variety Gate Drain Sour ce of other applications. Absolute ... See More ⇒

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 auirfp064n.pdf Design, MOSFET, Power

 auirfp064n.pdf RoHS Compliant, Service, Triacs, Semiconductor

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