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View irg4bc40u datasheet:

irg4bc40uirg4bc40u

D I I T I T D T I T I T Features C Features Features Features Features UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 20A E Industry standard TO-220AB package n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 40 IC @ TC = 100 C Continuous Collector Curre... See More ⇒

 

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 irg4bc40u.pdf Design, MOSFET, Power

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