View irg4ibc20fd datasheet:

PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.66V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.66V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). @VGE = 15V, IC = 9.0A E IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultrasoft recovery antiparallel diodes Tighter parameter distribution Industry standard Isolated TO-220 FullpakTM outline Benefits Simplified assembly Highest efficiency and power density HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage... See More ⇒

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