All Transistors. Datasheet

 

View irg4ibc20ud datasheet:

irg4ibc20udirg4ibc20ud

PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast Optimized for high operating VCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast, @VGE = 15V, IC = 6.5A E ultrasoft recovery antiparallel diodes n-channel Tighter parameter distribution Industry standard Isolated TO-220 FullpakTM outline Benefits Simplified assembly Highest efficiency and power density HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLP AK Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 11.4 IC ... See More ⇒

 

Keywords - ALL TRANSISTORS DATASHEET

 irg4ibc20ud.pdf Design, MOSFET, Power

 irg4ibc20ud.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg4ibc20ud.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.