View irgc100b60kb datasheet:

PD - 94618A IRGC100B60KB Die in Wafer Form Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=100A Low VCE(on) VCE(on) typ.=1.9V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Control Applications E 150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel Operation Qualified for Industrial Market Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (min, max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 0.85V min, 1.11V max IC = 10A, TJ = 25 C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V min TJ = 25 C, ICES = 1mA, VGE = 0V VGE(th) Gate Threshold Voltage 3.5V min, 5.5V max VGE = VCE , TJ

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