View irgsl4b60k datasheet:

PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 6.8A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G Maximum Junction Temperature rated at 175 C. tsc > 10 s, TJ=150 C E VCE(on) typ. = 2.1V Benefits n-channel Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220 D2Pak TO-262 IRGB4B60K IRGS4B60K IRGSL4B60K Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 12 IC @ TC = 100 C Continuous Collector Current 6.8 A ICM Pulse Collector Current (Ref.Fig.C.T.5) 24 Clamped Inductive Load current ILM 24 VGE Gat... See More ⇒

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