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View irgsl8b60k detailed specification:

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PD - 94545C IRGB8B60K IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL8B60K C Features VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 20A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G tsc>10 s, TJ=150 C E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak TO-262 IRGB8B60K IRGS8B60K IRGSL8B60K Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 28 IC @ TC = 100 C Continuous Collector Current 19 A ICM Pulse Collector Current (Ref.Fig.C.T.5) 56 Clamped Inductive Load current ILM 56 VGE Gate-to-Emitter Voltage 20 V PD @ TC = 25 C Maximum ... See More ⇒

 

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