View irlms2002pbf datasheet:

PD- 95675 IRLMS2002PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l N-Channel MOSFET D D VDSS = 20V l Surface Mount 2 5 D l Available in Tape & Reel D l 2.5V Rated 3 4 l Lead-Free G S RDS(on) = 0.030 Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% Micro6 compared to the SOT-... See More ⇒

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