View irlms4502 datasheet:

PD- 93759B IRLMS4502 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -12V l Surface Mount 2 5 D D l Available in Tape & Reel 3 4 G S RDS(on) = 0.042 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction Micro6 enables a current-handling increase of nearly 300% compared to the SOT-23. Absolute Maximum Ratings ... See More ⇒

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