View irlz44zpbf irlz44zspbf irlz44zlpbf datasheet:

PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features Logic Level HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 13.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 51A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of TO-220AB D2Pak TO-262 applications. IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC ... See More ⇒

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 irlz44zpbf irlz44zspbf irlz44zlpbf.pdf Design, MOSFET, Power

 irlz44zpbf irlz44zspbf irlz44zlpbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irlz44zpbf irlz44zspbf irlz44zlpbf.pdf Database, Innovation, IC, Electricity