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View ixgr32n90b2d1 detailed specification:

Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 M 900 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25OC47 A ISOLATED TAB E IC110 TC = 110OC22 A G = Gate C = Collector E = Emitter ICM TC = 25OC, 1 ms 200 A SSOA VGE= 15 V, TVJ = 125OC, RG = 10 ICM = 64 A Features (RBSOA) Clamped inductive load VCL ... See More ⇒

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