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View cjab25p03 detailed specification:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.3 3.3-8L V(BR)DSS RDS(on)MAX -25A -30V 20m @-10V DESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characterized avalanche voltage and Special process technology for high ESD current capability Good stability and uniformity with high EAS APPLICATIONS Battery and loading switching MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAB25P03 = Part No. CJAB Solid dot=Pin1 indicator 25P03 XX XX=Date Code 1 2 3 4 S S S G MAXIMUM RATINGS ( Ta=25 unless otherwise n... See More ⇒

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