All Transistors. Equivalents Search

View 2sa1107 detailed specification:

JMnic Product Specification Silicon PNP Power Transistors 2SA1107 DESCRIPTION With MT-200 package High power dissipations APPLICATIONS Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A PC Collector power dissipation TC=25 120 W Tj Junction temperature 150 Tstg Storage temperature -55 150 JMnic Product Specification Silicon PNP Power Transistors 2SA1107 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sa1107.pdf Design, MOSFET, Power

 2sa1107.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1107.pdf Database, Innovation, IC, Electricity