View 2n3906 datasheet:

SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. H 0.45 _ Low Collector Output Capacitance H J 14.00 + 0.50 K 0.55 MAX F F Cob=4.5pF(Max.) @VCB=5V. L 2.30 M 0.45 MAX Complementary to 2N3904. N 1.00 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TO-92 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA 625 mW Ta=25 Collector Power PC Dis... See More ⇒

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