View bs170rev1x datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS170/D TMOS FET Switching N Channel Enhancement BS170 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Drain Source Voltage VDS 60 Vdc CASE 29 04, STYLE 30 Gate Source Voltage TO 92 (TO 226AA) Continuous VGS 20 Vdc Non repetitive (tp 50 s) VGSM 40 Vpk Drain Current(1) ID 0.5 Adc Total Device Dissipation @ TA = 25 C PD 350 mW Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate Reverse Current IGSS 0.01 10 nAdc (VGS = 15 Vdc, VDS = 0) Drain Source Breakdown Voltage V(BR)DSS 60 90 Vdc (VGS = 0, ID = 100 Adc) ON CHARACTERISTICS(2) Gate Threshold Voltage VGS(Th) 0.8 2.0 3.... See More ⇒

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