View mtp2n2222a p2n2222a datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO 40 Vdc 3 Collector Base Voltage VCBO 75 Vdc CASE 29 04, STYLE 17 Emitter Base Voltage VEBO 6.0 Vdc TO 92 (TO 226AA) Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Device Dissipation @ TC = 25 C PD 1.5 Watts Derate above 25 C 12 mW/ C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteri... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 mtp2n2222a p2n2222a.pdf Design, MOSFET, Power

 mtp2n2222a p2n2222a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mtp2n2222a p2n2222a.pdf Database, Innovation, IC, Electricity