View nce75ed75vt datasheet:
NCE75ED75VT 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 75 A CEsat High speed switching, low switching losses Maximum junction temperature Tvjmax = 175 C Tighten parameter distribution High ruggedness, temperature stable behavior Pb-free lead plating; RoHS compliant Schematic diagram Application PV power Three-level Solar String Inverter UPS Package Marking and Ordering Information Device Device Package Device Marking NCE75ED75VT TO-247-3L NCE75ED75VT TO-247-3L Absolute Maximum Ratings (T =25 C unless o... See More ⇒
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nce75ed75vt.pdf Design, MOSFET, Power
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