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View mje13009-d datasheet:

mje13009-dmje13009-d

MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http //onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILICON Features POWER TRANSISTOR VCEO(sus) 400 V and 300 V 400 VOLTS - 100 WATTS Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 100_C is 120 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information TO-220AB These Devices are Pb-Free and are RoHS Compliant* CASE 221A-09 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector-Emitter Voltage VCEO(sus) 400 Vdc 3 ... See More ⇒

 

Keywords - ALL TRANSISTORS DATASHEET

 mje13009-d.pdf Design, MOSFET, Power

 mje13009-d.pdf RoHS Compliant, Service, Triacs, Semiconductor

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