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NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 40 A, 1200 V Features VCEsat = 2.30 V Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Eoff = 0.95 mJ Optimized for Low Losses in IH Cooker Application C Reliable and Cost Effective Single Die Solution This is a Pb-Free Device Typical Applications Inductive Heating G Consumer Appliances Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector-emitter voltage VCES ... See More ⇒

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