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NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N-Channel, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 0.9 mW @ 10 V 30 V 303 A 1.2 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V D (5) Gate-to-Source Voltage VGS "20 V Continuous Drain Cur- TC = 25 C ID 303 A rent RqJC (Notes 1, 3) Steady State G (4) Power Dissipation TC = 25 C PD 134 W RqJC (Notes 1, 3) Continuous Drain Cur- TA = 25 C ID 47 A S (1,2,3) rent RqJA (Notes 1, 2, Steady N-CHANNEL MOSFET 3) State Power Dissipation TA = 25 C PD 3.2 W RqJA (Notes 1, 2, 3) MARKING DIAGRAM... See More ⇒

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