View nvtfs5811nl datasheet:

NVTFS5811NL MOSFET Power, Single N-Channel 40 V, 6.7 mW, 40 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V 40 V 40 A These Devices are Pb-Free and are RoHS Compliant 10 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) N-Channel MOSFET Parameter Symbol Value Unit D (5-8) Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGS 20 V Continuous Drain Cur- Tmb = 25 C ID 40 A rent RYJ-mb (Notes 1, G (4) Tmb = 100 C 28 2, 3, 4) Steady State Power Dissipation Tmb = 25 C PD 21 W S (1,2,3) RYJ-mb (Notes 1, 2, 3) Tmb = 100 C 10 MARKING DIAGRAM Continuous Drain Cur- TA = 25 C ID 16... See More ⇒

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