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View 2sd1030 e detailed specification:

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. 0.1 to 0.3 0.4 0.2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1 Base JEDEC TO 236 Collector to emitter voltage VCEO 40 V 2 Emitter EIAJ SC 59 3 Collector Mini Type Package Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Marking symbol 1Z Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj ... See More ⇒

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