View bf908wr datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz. 3g2 gate 2 4g1 gate 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional d communications equipment. 3 4 g2 DESCRIPTION g1 Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by 2 1 integrated back-to-back diodes between gates and s,b source. Top view MAM19... See More ⇒

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