View 2sk2554 datasheet:

2SK2554 Silicon N Channel MOS FET REJ03G1016-0600 (Previous ADE-208-359D) Rev.6.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 4.5 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3 Rev.6.00 Sep 07, 2005 page 1 of 7 2SK2554 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 75 A Drain peak current ID(pulse)*1 300 A Body to drain diode reverse drain current IDR*2 75 A Avalanche current IAP*3 50 A Avalanche energy EAR*3 214 mJ Channel dissipation Pch*2 150 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 ... See More ⇒

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