View rjh60d1dpp-m0 datasheet:

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400 600V - 10A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (70 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load) Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 20 A Tc = 100 C IC 10 A Collector peak cur... See More ⇒

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