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Preliminary Datasheet RJP6016JPE R07DS0878EJ0100600 V - 40 A- N Channel IGBT Rev.1.00High Speed Power Switching Sep 19, 2012Features For Automotive application AEC-Q101 compliant Low collector to emitter saturation voltage. VCE(sat) = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )2, 4C41. Gate2. Collector 123. Emitter1 G34. Collector3EAbsolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitCollector to emitter voltage VCES 600 VGate to Emitter voltage VGES 20 VCollector current Tc = 25C IC 40 ATc = 100C IC 20 ACollector peak current iC(peak) Note1 80 ACollector power dissipation PC Note2 112 WJunction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle

 

Keywords - ALL TRANSISTORS DATASHEET

 rjp6016jpe.pdf Design, MOSFET, Power

 rjp6016jpe.pdf RoHS Compliant, Service, Triacs, Semiconductor

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