View rjp60f5dpm datasheet:

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200 600V - 40A - IGBT Rev.2.00 High Speed Power Switching May 31, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C 1. Gate G 2. Collector 3. Emitter E 1 2 3 Absolute Maximum Ratings (Tc = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 80 A Tc = 100 C IC 40 A Collector peak current ic(peak) Note1 160 A Collector dissipation PC 45 W Junction to case thermal impedance j-c 2.78 C/W Junction temperatu... See More ⇒

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