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swyn7n65dswyn7n65d

SW7N65D N-channel Enhanced mode TO-220FTN MOSFET Features TO-220FT BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 2 D 100% Avalanche Tested 3 Application Charger,LED,PC Power 1. Gate 2. Drain 3. Source G General Description S This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW YN 7N65D SW7N65D TO-220FTN TUBE Absolute maximum ratings Symbol Parameter Value Unit VDSS Drain to source voltage 650 V Continuous drain current (@TC=25oC) 7* A ID Continuous drain current (@TC=100oC) 4.4... See More ⇒

 

Keywords - ALL TRANSISTORS DATASHEET

 swyn7n65d.pdf Design, MOSFET, Power

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