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sch1332sch1332

SCH1332 Ordering number ENA1528 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SCH1332 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --2.5 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% --10 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2 0.8mm) 1 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --20 V Zero-Gate Voltage Drain Current IDSS VDS=... See More ⇒

 

Keywords - ALL TRANSISTORS DATASHEET

 sch1332.pdf Design, MOSFET, Power

 sch1332.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sch1332.pdf Database, Innovation, IC, Electricity

 

 
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