View sch1333 datasheet:

SCH1333 Ordering number ENA1531 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SCH1333 Applications Features 1.8V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --2 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% --8 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2 0.8mm) 0.8 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --20 V Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0V --1 A Gate-to-Source Leakage Current IGS... See More ⇒

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