View sch1334 datasheet:

SCH1334Ordering number : ENA1656SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1334ApplicationsFeatures Low ON-resistance. High-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --1.6 ADrain Current (Pulse) IDP PW10s, duty cycle1% --6.4 AAllowable Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) 0.8 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --12 VZero-Gate Voltage Drain Current IDSS VDS=--

Keywords - ALL TRANSISTORS DATASHEET

 sch1334.pdf Design, MOSFET, Power

 sch1334.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sch1334.pdf Database, Innovation, IC, Electricity