View st2sa1012 datasheet:

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 5 A Power Dissipation Ptot 25 W O Junction Temperature Tj 150 C O Storage Temperature Range Ts -55 to +150 C O Characteristics at Tamb = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 1 V, -IC = 1 A O hFE 70 - 140 - Y hFE 120 - 240 - at -VCE = 1 V, -IC = 3 A hFE 30 - - - Collector Emitter Breakdown Voltage -V(BR)CEO 50 - - V at -IC = 10 mA Collector Cutoff Current -ICBO - - 1 A at -VCB = 50 V Emitter Cutoff Current -IEBO -... See More ⇒

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