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View hfp2n60 detailed specification:

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipation Tc=25 54W 3 S VDSS Drain-Source Voltage 600V VGSS Gate-Source Voltage 30V ID Drain Current Tc=25 2.0A ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ Max Unit Test Conditions BVDSS Drain-Source Breakdown Voltage 600 V ID=250 A ,VGS=0V IDSS Zero Gate Voltage Drain Current 10 A VDS =60... See More ⇒

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