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View s9018 detailed specification:

s9018s9018

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO 92 S9018 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE High Current Gain Bandwidth Product 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W R JA Thermal Resistance From Junction To Ambient 312.5 /W Tj Junction Temperature 150 Tstg Storage Temperature -55 +150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 A,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 s9018.pdf Design, MOSFET, Power

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