All Transistors. Datasheet

 

View 2sa1797-p 2sa1797-q datasheet:

2sa1797-p_2sa1797-q2sa1797-p_2sa1797-q

2SA1797PNP Transistors Features3 Low saturation voltage Excellent DC current gain characteristics2 Complements to 2SC46721.Base12.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2ACollector Current - Pulse ICM -3 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -50 A IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA IB=0 -50 V Emitter - base breakdown voltage VEBO IE= -50A IC=0 -6 Collector-base

 

Keywords - ALL TRANSISTORS DATASHEET

 2sa1797-p 2sa1797-q.pdf Design, MOSFET, Power

 2sa1797-p 2sa1797-q.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1797-p 2sa1797-q.pdf Database, Innovation, IC, Electricity

 

 
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