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View 2sc6133 detailed specification:

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) 3 2 High-speed switching tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V 1 Gate Collector-emitter voltage VCEX 30 V 2 Source Collector-emitter voltage VCEO 20 V 3 Drain Emitter-base voltage VEBO 7 V UFM DC IC 1.5 Collector current A Pulse ICP 2.5 JEDEC Base current IB 150 mA JEITA P (Note1) 800 Collector power dissipation TOSHIBA 2-2U1A mW P (Note2) 500 Weight 6.6 mg (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C ... See More ⇒

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