View 2sk3879 datasheet:

2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3879 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 k ) VDGR 800 V Gate-source voltage VGSS 30 V DC (Note 1) ID 6.5 Drain current A Pulse (Note 1) IDP 19.5 Drain power dissipation (Tc = 25 C) PD 80 W Single pulse avalanche energy EAR 375 mJ JEDEC (Note 2) JEITA Avalanche current IAR 6.5 A Repetitive avalanche energy (Note 3) EAR 8 mJ TOSHIBA 2-10S2B Channel temperature Tch 150 C Weig... See More ⇒

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