View tk10a60d datasheet:

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK10A60D Unit mm Switching Regulator Applications Low drain-source ON-resistance RDS (ON) = 0.58 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 10 Drain current A Pulse (Note 1) IDP 40 1 Gate 2 Drain Drain power dissipation (Tc = 25 C) PD 45 W 3 Source Single pulse avalanche energy EAS 363 mJ (Note 2) Avalanche current IAR 10 A JEDEC Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEITA SC-67 Channel temperature Tch 150 C TOSHIBA 2-10U1B Storage tem... See More ⇒

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