View bs170pstoa bs170pstob bs170pstz datasheet:

N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb =25 C Ptot 625 mW Operating and Storage Temperature Range Tj Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BVDSS 60 V ID=100 A, VGS=0V Breakdown Voltage Gate-Source VGS(th) 0.8 3 V ID=1mA, VDS=VGS Threshold Voltage Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V Zero Gate Voltage IDSS 0.5 A VGS=0V, VDS=25V Drain Current Static Drain-Source RDS(on) 5 VGS=10V, ID=200mA on-State Resistance... See More ⇒

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