IKW50N60H3 Répertoire mondial des transistors gratuit

 

IKW50N60H3 - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques

Type: IKW50N60H3

Marquage: K50H603

Polarité: N-Channel

Puissance maximale dissipée (Pc): 333W

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 600V

Tension de saturation collecteur émetteur (Vcesat): 1.85V

Tension Grille – Émetteur (Veg):

Courant de Collecteur en DC (Ic): 100A

Température maximale de jonction en fonctionnement (Tj), °C:

Temps de commutation:

Capacité de sortie (Cc), pF:

Boitier: TO247

Recherche équivalences (un remplaçant pour le transistor IKW50N60H3 )

IKW50N60H3 Datasheet (PDF)

1.1. ikw50n60h3_rev1_1g.pdf Size:1642K _infineon

IKW50N60H3
IKW50N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very low V CEsat low

1.2. ikw50n60h3.pdf Size:2108K _igbt_a

IKW50N60H3
IKW50N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IKW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat

2.1. ikw50n60trev2_4g.pdf Size:412K _infineon

IKW50N60H3
IKW50N60H3

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for

2.2. ikw50n60t.pdf Size:593K _igbt_a

IKW50N60H3
IKW50N60H3

IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : G - Frequency Converters E - Uninterrupted Power Supply  TRENCHSTOP™

D'autres types de IGBT... IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , SKA06N60 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 .

 


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INDEX

UPDATE

IGBT BSM50GP60 | BSM50GP120 | BSM50GD60DLC_E3226 | BSM50GD60DLC | BSM50GD170DL | BSM50GD120DN2G | BSM50GD120DN2E3226 | BSM50GD120DN2 | BSM50GD120DLC | BSM50GB60DLC |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché