IRG4BC30W-S Répertoire mondial des transistors gratuit

 

IRG4BC30W-S - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques

Type: IRG4BC30W-S

Polarité: N-Channel

Puissance maximale dissipée (Pc): 100W

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 600V

Tension de saturation collecteur émetteur (Vcesat): 2.1V

Tension Grille – Émetteur (Veg):

Courant de Collecteur en DC (Ic): 12A

Température maximale de jonction en fonctionnement (Tj), °C: 150

Temps de commutation:

Capacité de sortie (Cc), pF:

Boitier: D2PAK

Recherche équivalences (un remplaçant pour le transistor IRG4BC30W-S )

IRG4BC30W-S PDF doc:

1.1. irg4bc30w.pdf Size:139K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I T D T I T I T Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E

1.2. irg4bc30w-s.pdf Size:188K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E Low IGBT conduction losses n-channel Latest

1.3. irg4bc30w.pdf Size:142K _igbt_a

IRG4BC30W-S
IRG4BC30W-S

 D I I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

1.4. irg4bc30w-s.pdf Size:169K _igbt_a

IRG4BC30W-S
IRG4BC30W-S

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E • Low IGBT conduction losses n-channe

D'autres types de IGBT... IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , RJP63K2DPK-M0 , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD .

 


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INDEX

UPDATE

IGBT FF300R07ME4_B11 | FF300R07KE4 | FF300R06KE3_B2 | FF300R06KE3 | FF225R17ME4_B11 | FF225R17ME4 | FF225R17ME3 | FF225R12MS4 | FF225R12ME4_B11 | FF225R12ME4 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché