IRF740 Répertoire mondial des transistors gratuit

 

IRF740 MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors

Type: IRF740

Transistor à effet de champ: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 125

Tension drain-source de rupture (Vds): 400

Tension grille-source de rupture (Vgs): 20

Courant de drain maximum supportable (Id): 10

Température maximale de jonction en fonctionnement (Tj), °C: 150

Temps de commutation (tr):

Capacité de sortie (Cd), pF: 1450

Résistance drain-source RDS (activé), Ohm: 0.55

Boitier: TO220

Recherche équivalences (un remplaçant pour le transistor IRF740 )

IRF740 PDF doc:

1.1. irf740s.pdf Size:93K _st

IRF740
IRF740

IRF740S ? N - CHANNEL 400V - 0.48 ? - 10A- D2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR THROUGH-HOLE VERSION CONTACT 1 SALES OFFICE D2PAK DESCRIPTION TO-263 This power MOSFET is designed using the (Suffix

1.2. irf740.pdf Size:93K _st

IRF740
IRF740

IRF740 ? N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the 3 2 companys consolidated strip layout-based MESH 1 OVERLAY process. Thi

1.3. irf740-1-2-3-fi.pdf Size:482K _st2

IRF740
IRF740

1.4. irf740b.pdf Size:894K _fairchild_semi

IRF740
IRF740

November 2001 IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to Fast switchin

1.5. irf740.pdf Size:154K _fairchild_semi

IRF740
IRF740

1.6. irf740as-l.pdf Size:304K _international_rectifier

IRF740
IRF740

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

1.7. irf740a.pdf Size:196K _international_rectifier

IRF740
IRF740

PD- 94828 SMPS MOSFET IRF740APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

1.8. irf740spbf.pdf Size:951K _international_rectifier

IRF740
IRF740

PD - 95204 IRF740SPbF Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055 www.vishay.com 5 IRF740SPbF Document Number: 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outline D

1.9. irf740s.pdf Size:171K _international_rectifier

IRF740
IRF740

1.10. irf740as.pdf Size:135K _international_rectifier

IRF740
IRF740

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Volt

1.11. irf7406.pdf Size:114K _international_rectifier

IRF740
IRF740

PD - 9.1247C IRF7406 PRELIMINARY HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045? Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

1.12. irf7404.pdf Size:163K _international_rectifier

IRF740
IRF740

PD - 9.1246C IRF7404 HEXFET Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

1.13. irf7403.pdf Size:116K _international_rectifier

IRF740
IRF740

PD - 9.1245B PRELIMINARY IRF7403 HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

1.14. irf740lc.pdf Size:174K _international_rectifier

IRF740
IRF740

1.15. irf740.pdf Size:926K _international_rectifier

IRF740
IRF740

PD - 94872 IRF740PbF Lead-Free 12/5/03 Document Number: 91053 www.vishay.com 1 IRF740PbF Document Number: 91053 www.vishay.com 2 IRF740PbF Document Number: 91053 www.vishay.com 3 IRF740PbF Document Number: 91053 www.vishay.com 4 IRF740PbF Document Number: 91053 www.vishay.com 5 IRF740PbF Document Number: 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline Dimen

1.16. irf7401.pdf Size:118K _international_rectifier

IRF740
IRF740

PD - 9.1244C IRF7401 HEXFET Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

1.17. irf7402.pdf Size:136K _international_rectifier

IRF740
IRF740

PD - 93851A IRF7402 HEXFET Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 Available in Tape & Reel 5 G D RDS(on) = 0.035? Fast Switching Top View Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processi

1.18. irf740lcpbf.pdf Size:1404K _international_rectifier

IRF740
IRF740

PD - 94880 IRF740LCPbF Lead-Free 12/10/03 Document Number: 91052 www.vishay.com 1 IRF740LCPbF Document Number: 91052 www.vishay.com 2 IRF740LCPbF Document Number: 91052 www.vishay.com 3 IRF740LCPbF Document Number: 91052 www.vishay.com 4 IRF740LCPbF Document Number: 91052 www.vishay.com 5 IRF740LCPbF Document Number: 91052 www.vishay.com 6 IRF740LCPbF Document Number:

1.19. irf740a.pdf Size:937K _samsung

IRF740
IRF740

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

1.20. irfp340-343_irf740-743.pdf Size:191K _samsung

IRF740
IRF740



1.21. irf740lc_sihf740lc.pdf Size:197K _vishay

IRF740
IRF740

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Compliant to RoHS Dire

1.22. irf740_sihf740.pdf Size:196K _vishay

IRF740
IRF740

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220

1.23. irf740a_sihf740a.pdf Size:205K _vishay

IRF740
IRF740

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Singl

1.24. irf740.pdf Size:246K _inchange_semiconductor

IRF740
IRF740

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF740 DESCRIPTION ·Drain Current –ID= 10A@ TC=25? ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55?(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power suppli

1.25. hirf740.pdf Size:48K _hsmc

IRF740
IRF740

Spec. No. : MOS200512 HI-SINCERITY Issued Date : 2005.09.01 Revised Date : 2005.09.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N-Channel MOSFETs provide the designer with the best combination of f

D'autres types de transistors... IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRF1404 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL , IRF740AS , IRF740FI .

 


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MOSFET AOT9N40L | AOT7S65L | AOT7S60L | AOT4S60L | AOT462 | AOT42S60L | AOT428 | AOT426 | AOT402 | AOT400 | AOTF7S60L | AOTF7S60 | AOTF298L | AOTF20S60L | AOTF18N65L |

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