9012 Répertoire mondial des transistors gratuit

 

9012 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: 9012

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.4

Tension collecteur–base (maximale) Vcb: 25

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 25

Tension émetteur–base (maximale) Veb: 3

Courant collecteur maximal (Ic): 0.4

Température maximale de jonction (Tj), °C: 135

Fréquence maximale de fonctionnement (fT): 50

Capacite collecteur (Cc), pF: 3.5

Gain en courant DC hFE (hfe): 64

Boitier: TO92

Recherche équivalences (un remplaçant pour le transistor 9012 )

9012 Datasheet (PDF)

1.1. ktc9012sc.pdf Size:613K _update

9012
9012

SEMICONDUCTOR KTC9012SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9013SC. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO -40 V Collector-Base Voltage VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA

1.2. s9012w.pdf Size:537K _update

9012
9012

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 S9012W TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to S9013W 3. COLLECTOR Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ℃ Symbol Parameter Value Unit VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emit

1.3. s9012h.pdf Size:215K _update

9012

《风光欣》技术资料 *********************************************************************************** S 9012 PNP EPITAXIAL SILICON TRANSISTOR 主要用途:前置放大、混频、振荡等。 绝对最大额定值(Ta=25℃) 项 目 符号 额定值 单位 集电极-基极电压 VCBO -40 V 集电极-发射极电压 VCEO -20 V 发射极-基极电压 VEBO -5 V 集电极

1.4. s9012g_s9012h_s9012i.pdf Size:199K _update

9012
9012

S9012-G MCC Micro Commercial Components TM S9012-H 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9012-I Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon • Collector-current 0.5A • Collector-base Voltage 40V Transistors • Operating a

1.5. s9012lt.pdf Size:939K _update

9012
9012

 Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation: Pc=225mW MECHANICAL DATA * Case: SOT-23 Molded plastic * Epoxy: UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T

1.6. tp9012nnd03.pdf Size:340K _update

9012
9012

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2×1.2×0.5) TOP unit: mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl

1.7. ss9012.pdf Size:35K _fairchild_semi

9012
9012

SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collecto

1.8. ss9012.pdf Size:46K _samsung

9012
9012

SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS TO-92 B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCE

1.9. 9012.pdf Size:97K _utc

9012
9012

UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) 1 *Excellent hFE linearity *Complementary to UTC 9013 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT

1.10. mmbt9012.pdf Size:98K _utc

9012
9012

UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. (625mW) 1 *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3 MARKING 12 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )

1.11. sts9012.pdf Size:106K _auk

9012
9012

STS9012 Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9013 Ordering Information Type NO. Marking Package Code STS9012 STS9012 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ

1.12. s9012t.pdf Size:89K _secos

9012
9012

S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A 0.43+0.08 –0.07 46+0.1 0. –0.1 Collector-base voltage V(BR)CBO : -40 V (1.27 Typ.) 1: Emitter Operating and storage junction temperature range +0.2 1.25

1.13. s9012.pdf Size:233K _secos

9012

S9012 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM : 0.3 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : - 0.5 A A Emitter H 0.013 0.100 L Collector-base volt

1.14. cmbt9012.pdf Size:131K _cdil

9012
9012

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Coll

1.15. cd9012.pdf Size:165K _cdil

9012
9012

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9012 TO-92 CBE General Purpose Audio Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 500 mA Collector Power Di

1.16. ktc9012.pdf Size:46K _kec

9012
9012

SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9013. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25?) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -40 V Co

1.17. ktc9012s.pdf Size:395K _kec

9012
9012

SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9013S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P

1.18. 2sa9012.pdf Size:74K _usha

9012
9012

Transistors 2SA9012

1.19. s9012.pdf Size:768K _htsemi

9012
9012

S901 2 SOT-23 TRANSISTOR(PNP) FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Po

1.20. s9012.pdf Size:240K _gsme

9012
9012

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9012 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ?????? hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9013 ? GM9013 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS ?????(Ta=25?) MAXIMUM RATINGS (Ta=25 ) Character

1.21. s9012_sot-23.pdf Size:212K _lge

9012
9012

S9012 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING: 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector

1.22. s9012_to-92.pdf Size:245K _lge

9012
9012

S9012(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Curre

1.23. 6ps09012e4dg35566.pdf Size:424K _igbt_a

9012
9012

Technische Information / Technical Information IGBT-Module FF450R12KE4 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode Vorläufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Höchstzulässige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannun

1.24. s9012.pdf Size:1633K _wietron

9012
9012

S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5 Vdc Collector Current IC -500 mAdc PCM Total Device Dissipation T =25 C 0.625 W A Junction Temperature T 150

1.25. s9012lt1.pdf Size:238K _wietron

9012
9012

S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http://www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics

1.26. bta9012a3.pdf Size:319K _cystek

9012
9012

Spec. No. : C305A3 Issued Date : 2014.02.17 CYStech Electronics Corp. Revised Date : 2014.03.11 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3 Description • The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10

1.27. s9012_sot-23.pdf Size:275K _can-sheng

9012
9012

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) FEATURES Complimentary to S9013 Collector current:Ic=0.5A MARKING:2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单

1.28. 9012m.pdf Size:943K _blue-rocket-elect

9012
9012

9012M(BR3CG9012M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features P 、I 大,h 特性极好,与 9013M(BR3DG9013M)互补。 C C FE High PC and IC, Excellent hFE linearity, complementary pair with 9013M(BR3DG9013M). 用途 / Applications 用于收音机推挽功

1.29. l9012qlt1g.pdf Size:80K _lrc

9012
9012

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.30. l9012slt1g.pdf Size:79K _lrc

9012
9012

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.31. l9012plt1g.pdf Size:82K _lrc

9012
9012

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.32. l9012rlt1g.pdf Size:79K _lrc

9012
9012

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.33. h9012.pdf Size:129K _shantou-huashan

9012
9012

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9012 █ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissip

1.34. 3cg9012.pdf Size:217K _china

9012
9012

S9012(3CG9012) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于收音机推挽功放。 Purpose: Amplifier of portable radios in class B push-pull operation. 特点:P 、I 大, h 特性极好,与 S9013(3DG9013)互补。 C C FE Features: High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE 极限参数/Absolute maximum ratings(Ta=25℃)

1.35. ftc9012s.pdf Size:96K _first_silicon

9012
9012

SEMICONDUCTOR FTC9012S TECHNICAL DATA X General Purpose Transistors PNP Silicon FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 ORDERING INFORMATION 1 Device Package Shipping SOT-23 FTC9012SX SOT– 23 FTC9012SX 10000/Tape&Reel SOT-23 3 COLLECTOR 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 2

1.36. kst9012c.pdf Size:137K _kexin

9012
9012

SMD Type Transistors SMD Type IC SMD Type PNP Transistors KST9012C SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE liearity Collector Current :IC=-0.5A 12 +0.05 0.95+0.1 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltag

1.37. kst9012.pdf Size:925K _kexin

9012
9012

SMD Type or SMD Type TransistICs SMD Type PNP Transistors KST9012 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE liearity Collector Current :IC=-0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Volta

1.38. s9012.pdf Size:579K _shenzhen-tuofeng-semi

9012

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A 1 2 3 Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150

1.39. s9012lt1.pdf Size:371K _shenzhen-tuofeng-semi

9012
9012

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Unit: mm TJ, Tst

D'autres types de transistors... 9010 , 9011 , 9011D , 9011E , 9011F , 9011G , 9011H , 9011I , MJE13003 , 9012D , 9012E , 9012F , 9012G , 9012H , 9013 , 9013D , 9013E .

 


9012
  9012
  9012
  9012
 
9012
  9012
  9012
  9012
 

social 

INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT PT9790 | PT9734 | PT9732 | PT9731 | PT9730 | PT23T9014 | PT23T9013 | PT23T8550 | PT23T8050 | PT23T5551 | PT23T5401 | PT23T3906 | PT23T3904 | PT23T2907A | PT23T2222A | PT236T30E2M | PT236T30E2H | PT236T30E2 | PQMD12 | PPT8N30E2 |