MJ4031 Répertoire mondial des transistors gratuit

 

MJ4031 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: MJ4031

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 150

Tension collecteur–base (maximale) Vcb: 80

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 80

Tension émetteur–base (maximale) Veb: 5

Courant collecteur maximal (Ic): 16

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement (fT):

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 2000

Boitier: TO3

Recherche équivalences (un remplaçant pour le transistor MJ4031 )

MJ4031 Datasheet (PDF)

1.1. mj4030-mj4031-mj4032-mj4033-mj4034-mj4035.pdf Size:215K _comset

MJ4031
MJ4031

MEDIUM POWER COMPLEMENTARY SILICON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS TRANSISTORS For use as output devices in complementary general purpose amplifier applications. High DC current Gain hFE=3500 (Typ) @ IC=10 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The complementary PNP types are the MJ4033

1.2. mj4031.pdf Size:199K _inchange_semiconductor

MJ4031
MJ4031

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4031 DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4034 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER VALUE UNIT VCBO Coll

5.1. mj4032_mj4035.pdf Size:69K _st

MJ4031
MJ4031

MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 1 GENERAL PURPOSE SWITCHING 2 GENERAL PURPOSE AMPLIFIERS DESCRIPTION TO-3 The MJ4035 is silicon epitaxial-base NPN power transistor in monoli

5.2. mj4032.pdf Size:199K _inchange_semiconductor

MJ4031
MJ4031

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4032 DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER VALUE UNIT VCBO Coll

5.3. mj4033_4034_4035.pdf Size:116K _inchange_semiconductor

MJ4031
MJ4031

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Respectively complement to type MJ4030/4031/4032 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ4033/4034/4035

5.4. mj4030.pdf Size:199K _inchange_semiconductor

MJ4031
MJ4031

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4030 DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER VALUE UNIT VCBO Coll

D'autres types de transistors... MJ3801 , MJ3802 , MJ400 , MJ4000 , MJ4001 , MJ4010 , MJ4011 , MJ4030 , 2N2222 , MJ4032 , MJ4033 , MJ4034 , MJ4035 , MJ410 , MJ4101 , MJ411 , MJ413 .

 


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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché