MPQ3762 Répertoire mondial des transistors gratuit

 

MPQ3762 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: MPQ3762

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.75

Tension collecteur–base (maximale) Vcb: 40

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 40

Tension émetteur–base (maximale) Veb: 5

Courant collecteur maximal (Ic): 1.5

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement (fT): 150

Capacite collecteur (Cc), pF: 15

Gain en courant DC hFE (hfe): 20

Boitier: TO116

Recherche équivalences (un remplaçant pour le transistor MPQ3762 )

MPQ3762 Datasheet (PDF)

1.1. mpq3762.pdf Size:493K _update

MPQ3762

Quad Transistors TO-116 Case (14 Pin DIP) TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB hFE @ IC VCE (SAT ) @ IC Cob fT NF tOFF COMMENTS PIN Typ † CONFIG.** (V) (V) (V) (nA) (V) (mA) (V) (mA) (pF) (MHz) (dB) (ns) MIN MIN MIN MAX MIN MAX MAX MIN MAX MPQ2222 NPN AMPL/SWITCH 60 40 5.0 50 50 30 300 0.40 150 8.0 200 - - - - 4X 2N2222

5.1. mpq3799.pdf Size:101K _update

MPQ3762
MPQ3762

MPQ3798 MPQ3799 PNP SILICON QUAD TRANSISTOR TO-116 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL MPQ3798 MPQ3799 UNITS Collector-Base Voltage VCBO 60 60 V Collector-Emitter Voltage VCEO 4

5.2. mpq3725.pdf Size:38K _update

MPQ3762



5.3. mpq3798.pdf Size:101K _update

MPQ3762
MPQ3762

MPQ3798 MPQ3799 PNP SILICON QUAD TRANSISTOR TO-116 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL MPQ3798 MPQ3799 UNITS Collector-Base Voltage VCBO 60 60 V Collector-Emitter Voltage VCEO 4

5.4. mpq3725a.pdf Size:218K _update

MPQ3762
MPQ3762

TM Central MPQ3725A Semiconductor Corp. NPN SILICON DESCRIPTION: QUAD TRANSISTOR The CENTRAL SEMICONDUCTOR MPQ3725A type is comprised of four independant silicon NPN transistors mounted in a 14-Pin DIP case, designed for core driver applications. MARKING CODE: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Emitter Voltage VCES 70 V Collector-Emitt

5.5. mmpq3725.pdf Size:111K _motorola

MPQ3762
MPQ3762

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMPQ3725/D Quad Core Driver MMPQ3725 Transistor 1 16 NPN Silicon Motorola Preferred Device 2 15 3 14 4 13 5 12 6 11 7 10 8 9 16 1 MAXIMUM RATINGS Rating Symbol Value Unit CASE 751B05, STYLE 4 SO16 CollectorEmitter Voltage VCEO 40 Vdc CollectorEmitter Voltage VCES 60 Vdc EmitterBase Voltage VEB 5.0 Vdc Collect

5.6. mpq3725.pdf Size:39K _central

MPQ3762

5.7. mpq3725a.pdf Size:218K _central

MPQ3762
MPQ3762

TM Central MPQ3725A Semiconductor Corp. NPN SILICON DESCRIPTION: QUAD TRANSISTOR The CENTRAL SEMICONDUCTOR MPQ3725A type is comprised of four independant silicon NPN transistors mounted in a 14-Pin DIP case, designed for core driver applications. MARKING CODE: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Emitter Voltage VCES 70 V Collector-Emitter V

D'autres types de transistors... MP4T801 , MP4T802 , MP4T856 , MP6301 , MP6901 , MPQ3467 , MPQ3725 , MPQ3725A , C1815 , MPQ3798 , MPQ3799 , MPQ6002 , MPQ6100A , MPQ6502 , MPQ6700 , MPQ7043 , MPQ7053 .

 


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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT 3DF05 | 3DD9E | 3DD9D | 3DD99 | 3DD9 | 3DD8E | 3DD831 | 3DD820 | 3DD810 | 3DD8 | 3DD7525A3 | 3DD742A8 | 3DD741A8 | 3DD741A4 | 3DD73 | 3DD71 | 3DD7 | 3DD6E-T | 3DD69 | 3DD68 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché