2SA2210-1E Répertoire mondial des transistors gratuit

 

2SA2210-1E - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: 2SA2210-1E

Marquage: A2210

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 30

Tension collecteur–base (maximale) Vcb: 50

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 50

Tension émetteur–base (maximale) Veb: 6

Courant collecteur maximal (Ic): 20

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement (fT): 140

Capacite collecteur (Cc), pF: 215

Gain en courant DC hFE (hfe): 150

Boitier: TO220

Recherche équivalences (un remplaçant pour le transistor 2SA2210-1E )

 

2SA2210-1E Datasheet (PDF)

1.1. 2sa2210-1e.pdf Size:176K _update

2SA2210-1E
2SA2210-1E

Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com – – ( ) 50V, 20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Pa

3.1. 2sa2210.pdf Size:53K _sanyo

2SA2210-1E
2SA2210-1E

Ordering number : ENA0667 2SA2210 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Rating

4.1. 2sa2214 090421.pdf Size:126K _toshiba

2SA2210-1E
2SA2210-1E

2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) 1 High-speed switching: tf = 37 ns (typ.) 3 2 Absolute Maximum Ratings (Ta = 2

4.2. 2sa2219 090928.pdf Size:165K _toshiba

2SA2210-1E
2SA2210-1E

2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 0 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = -160 V (min) Small collector output capacitance : Cob = 17pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base

4.3. 2sa2215 090421.pdf Size:125K _toshiba

2SA2210-1E
2SA2210-1E

2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) 1 High-speed switching: tf = 40 ns (typ.) 3 2 Absolute Maximum Ratings (Ta = 2

D'autres types de transistors... 2SA2166 , 2SA2167 , 2SA2169-E , 2SA2169-TL-E , 2SA2186-AN , 2SA2188 , 2SA2205-E , 2SA2205-TL-E , BC337 , 2SA2223 , 2SA2223A , 2SA562-O , 2SA562-Y , 2SB1201S-E , 2SB1201S-TL-E , 2SB1201T-E , 2SB1201T-TL-E .

 


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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT BCP69T1G | BCP68T1G | BCP56T3G | BCP56T1G | BCP56-16T3G | BCP56-16T1G | BCP5616Q | BCP56-10T3G | BCP56-10T1G | BCP53T1G | BCP53-16T3G | BCP53-16T1G | BCP5316Q | BCP53-10T1G | BCP3904 | BCM857DS | BCM857BV | BCM857BS | BCM856DS | BCM856BS |